Static and dynamical properties of dispersive optical bistability in semiconductor lasers

Author

Hui, Rongqing

Author_Institution

Dept. of Electr. Eng., Ottawa Univ., Ont., Canada

Volume

13

Issue

1

fYear

1995

fDate

1/1/1995 12:00:00 AM

Firstpage

42

Lastpage

48

Abstract

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition

Keywords

carrier lifetime; laser mode locking; laser theory; optical bistability; optical dispersion; optical switches; semiconductor lasers; OB switch-off time; above threshold; dispersive optical bistability; dispersive semiconductor laser amplifiers; dynamical properties; effective carrier lifetime; injection-locked condition; laser diode; semiconductor lasers; static properties; well above threshold; Diode lasers; Dispersion; Nonlinear optics; Optical bistability; Optical refraction; Optical saturation; Optical variables control; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.350648

Filename

350648