Title :
The fabrication of Ga1-xAlxAs-GaAs heterojunction bipolar transistors for rapid material analysis
Author :
Roedel, Ronald J. ; West, William ; Lee, Tart S. ; Davito, David ; Adams, Robert
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
fDate :
2/1/1995 12:00:00 AM
Abstract :
We report a procedure for fabricating Ga1-xAlx As-GaAs heterojunction bipolar transistors with a single Al-Ge-Ni metallization step for rapid material analysis. Al-Ge-Ni produces an excellent ohmic contact to both n- and p-type GaAs, and eliminates the need for two metallization steps to produce the three transistor contacts. Complete transistor fabrication, which includes separate etching steps to the base and the subcollector, can be carried out in approximately four hours. We have used this rapid turnaround time to enhance wafer yield by minimizing the lag time between the onset of a growth problem or reactor hardware problem and subsequent growth runs
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; heterojunction bipolar transistors; semiconductor device metallisation; Al-Ge-Ni; Ga1-xAlxAs-GaAs HBT; GaAlAs-As; etching steps; fabrication; heterojunction bipolar transistors; ohmic contact; rapid material analysis; single Al-Ge-Ni metallization step; Doping; Epitaxial layers; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Inductors; Inorganic materials; Metallization; Ohmic contacts; Thickness measurement;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
