DocumentCode
1231246
Title
The RF performance of long junction active devices using TlCaBaCuO step edge structures
Author
Martens, J.S. ; Hietala, V.M. ; Zipperian, T.E. ; Vawter, G.A. ; Ginley, D.S. ; Tigges, C.P.
Author_Institution
Sandia Nat. Lab., Albuquerque, NM, USA
Volume
2
Issue
2
fYear
1992
fDate
6/1/1992 12:00:00 AM
Firstpage
74
Lastpage
78
Abstract
The authors report the fabrication of long, step-edge junctions using TlCaBaCuO with associated control lines that demonstrate strong modulation of critical current, usable current gains, large power gains, and fairly large bandwidths. The devices are operational at up to 95 K and RF measurements have been made at 77 K at frequencies up to a probe-limited 10 GHz. These four terminal devices have output impedances of 2-20 Omega , small signal current gains greater than 2.5, available power gains of over 10 dB from 0.5 to 10 GHz, and minimum noise figures of less than 1 dB.<>
Keywords
barium compounds; calcium compounds; high-temperature superconductors; solid-state microwave devices; superconducting junction devices; thallium compounds; transistors; 0.5 to 10 GHz; 1 dB; 10 dB; 2 to 20 ohm; 77 to 95 K; Josephson transistors; RF measurements; RF performance; TlCaBaCuO; bandwidths; control lines; current gains; fabrication; four terminal devices; high temperature superconductors; long junction active devices; modulation of critical current; noise figures; output impedances; power gains; step edge structures; step-edge junctions; Bandwidth; Critical current; Critical current density; Frequency measurement; High temperature superconductors; Impedance; Josephson junctions; Noise figure; Radio frequency; Superconducting materials;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/77.139222
Filename
139222
Link To Document