High-performance monolithic dual-MSM photodetector for long-wavelength coherent receivers

Author

Chang, Gee-Kung ; Hong, Woo-Pyo ; Gimlett, J.L. ; Bhat, Ritesh ; Nguyen, Chinh K.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

25

Issue

16

fYear

1989

Firstpage

1021

Lastpage

1023

Abstract

A high-speed AlInAs/GaInAs monolithic dual-MSM photodetector has been demonstrated for long-wavelength coherent receiver applications. It exhibits a very low leakage current (<2 nA at 8 V), attains extremely high electrical isolation (>1000 M Omega ), and shows strong suppression to local oscillator laser intensity noise (>16 dB up to 5 GHz). This device has been fabricated using FET planar process technology to obtain a high-performance balanced mixer receiver for high-density wavelength-division-multiplexed systems.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical communication equipment; photodetectors; receivers; 2 nA; AlInAs-GaInAs-InP; FET planar process technology; III-V semiconductors; WDM application; balanced mixer receiver; dual-MSM photodetector; high electrical isolation; high-speed; long-wavelength coherent receivers; low leakage current; metal-semiconductor-metal type; monolithic structure; noise suppression; optical communication; wavelength-division-multiplexed systems;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890683

Filename

35080