DocumentCode :
1231491
Title :
Photon-counting receiver in near-infra-red region: use of GaInAs avalanche photodiode
Author :
Kikuchi, Kazuro ; Yamada, Makoto
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
Volume :
25
Issue :
16
fYear :
1989
Firstpage :
1028
Lastpage :
1029
Abstract :
A photon-counting receiver using a GaInAs avalanche photodiode has been constructed. The receiver has a quantum efficiency greater than 1% in the spectral range from 800 to 1600 nm, where no practical photomultipliers are available. The real-time recording of single photon incidence is also achieved with 20 ns time resolution.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; infrared detectors; photodetectors; photon counting; 1 percent; 20 ns; 800 to 1600 nm; APD; GaInAs; III-V semiconductors; avalanche photodiode; nanosecond time-resolution; near IR-region; near infrared; near-infra-red region; photon-counting receiver; quantum efficiency; real-time recording; single photon incidence;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890687
Filename :
35084
Link To Document :
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