DocumentCode
1231608
Title
Robust Negative Differential Conductance and Enhanced Shot Noise in Transport Through a Molecular Transistor With Vibration Assistance
Author
Dong, Bing ; Lei, X.L. ; Horing, N. J M
Author_Institution
Dept. of Phys., Shanghai Jiaotong Univ., Shanghai
Volume
8
Issue
6
fYear
2008
fDate
6/1/2008 12:00:00 AM
Firstpage
885
Lastpage
890
Abstract
In this paper, we analyze vibration-assisted sequential tunneling (including current-voltage characteristics and zero-frequency shot noise) through a molecular quantum dot with two electronic orbitals asymmetrically coupled to the internal vibration. We employ rate equations for the case of equilibrated phonons, and strong Coulomb blockade. We find that a system with a strongly phonon-coupled ground state orbital and weakly phonon-coupled excited state orbital exhibits strong negative differential conductance; and it also shows super-Poissonian current noise. We discuss in detail the reasons and conditions for the appearance of negative differential conductance.
Keywords
Coulomb blockade; electric admittance; molecular electronics; quantum interference devices; semiconductor quantum dots; transistors; Coulomb blockade; current-voltage characteristics; enhanced shot noise; equilibrated phonons; molecular quantum dot; molecular transistor; negative differential conductance; phonon-coupled ground state orbital; robust negative differential conductance; super-Poissonian current noise; vibration assistance; vibration-assisted sequential tunneling; zero-frequency shot noise; Current-voltage characteristics; Electrodes; Equations; Noise robustness; Phonons; Physics; Quantum dots; Sensor systems; Tunneling; Vibrations; Negative differential conductance; super-Poissonian shot noise; vibration-assisted tunneling;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2008.923271
Filename
4529177
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