Title :
Low-frequency noise characteristics of AlInAs/GaInAs modulation-doped field-effect transistors
Author :
Sasaki, Gaku ; Hong, Woo-Pyo ; Chang, Gee-Kung ; Bhat, Ritesh ; Turco, F.S. ; Leblanc, Herve P.
Author_Institution :
Bell Commun. Res., Red Bank, NJ, USA
Abstract :
The output noise voltage of AlInAs/GaInAs MODFETs grown by both MOCVD and MBE was measured at frequencies from 1 MHz to 1.5 GHz under different bias conditions for the first time. For frequencies below 500 MHz the noise voltage showed a 1/f dependence with a corner frequency around 200 MHz. The low-frequency noise was larger at the bias conditions giving higher transconductance.
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; random noise; solid-state microwave devices; vapour phase epitaxial growth; 1 MHz to 1.5 GHz; 1/f dependence; AlInAs-GaInAs; HEMT; III-V semiconductors; MBE; MOCVD; MODFETs; OEIC; bias conditions; low-frequency noise; microwave device; modulation-doped field-effect transistors; optoelectronics; output noise voltage; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890694
