Title :
Mid-infrared ring laser
Author :
Krier, A. ; Sherstnev, V.V. ; Wright, D. ; Monakhov, A.M. ; Hill, G.
Author_Institution :
Phys. Dept., Lancaster Univ., UK
fDate :
6/12/2003 12:00:00 AM
Abstract :
The first mid-infrared ring laser diode based on InAs and operating in the mid-infrared spectral region near 3 μm and with a maximum operating temperature of 125 K is reported. The source is based on a symmetrical double heterostructure with large band offsets.
Keywords :
laser cavity resonators; ring lasers; semiconductor lasers; 125 K; 3 micron; InAs; large band offsets; mid-IR laser diode; mid-infrared ring LD; mid-infrared spectral region; ring resonator lasers; semiconductor lasers; symmetrical double heterostructure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030598
