Title :
Performance characteristics of buried facet quarter-wave shifted distributed feedback lasers
Author :
Twu, Y. ; Karlicek, Robert F. ; Wynn, J.D. ; Green, C.A. ; Roxlo, C.B. ; Wang, S.J. ; Dutta, N.K.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The performance characteristics of quarter-wave shifted GaInAsP distributed feedback lasers emitting near 1.3 mu m are described. The quarter-wave shifted grating is fabricated on a substrate using the double-exposure holographic technique. The low reflectivity required for this quarter-wave shifted DFB laser is obtained using buried facets at both ends of the laser. The lasers have threshold current of 30 mA, quantum efficiency of 0.18 mW/mA/facet, bandwidth of 11.5 GHz at 10 mW and 10 dB chirp width of 2.5 AA under 40 mA modulation current at 5 Gbit/s.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; laser transitions; optical communication equipment; semiconductor junction lasers; 1.3 micron; 10 mW; 11.5 GHz; 30 mA; 40 mA; 5 Gbit/s; DFB laser; GaInAsP-InP; III-V semiconductors; buried facet; distributed feedback lasers; double-exposure holographic technique; modulation current; optical communication light source; performance characteristics; quantum efficiency; quarter-wave shifted grating; semiconductor lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890698
