Performance characteristics of buried facet quarter-wave shifted distributed feedback lasers

Author

Twu, Y. ; Karlicek, Robert F. ; Wynn, J.D. ; Green, C.A. ; Roxlo, C.B. ; Wang, S.J. ; Dutta, N.K.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

25

Issue

16

fYear

1989

Firstpage

1045

Lastpage

1046

Abstract

The performance characteristics of quarter-wave shifted GaInAsP distributed feedback lasers emitting near 1.3 mu m are described. The quarter-wave shifted grating is fabricated on a substrate using the double-exposure holographic technique. The low reflectivity required for this quarter-wave shifted DFB laser is obtained using buried facets at both ends of the laser. The lasers have threshold current of 30 mA, quantum efficiency of 0.18 mW/mA/facet, bandwidth of 11.5 GHz at 10 mW and 10 dB chirp width of 2.5 AA under 40 mA modulation current at 5 Gbit/s.

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; laser transitions; optical communication equipment; semiconductor junction lasers; 1.3 micron; 10 mW; 11.5 GHz; 30 mA; 40 mA; 5 Gbit/s; DFB laser; GaInAsP-InP; III-V semiconductors; buried facet; distributed feedback lasers; double-exposure holographic technique; modulation current; optical communication light source; performance characteristics; quantum efficiency; quarter-wave shifted grating; semiconductor lasers; threshold current;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890698

Filename

35095