Title :
Very high gain AlGaAs/GaAs pnp heterojunction bipolar transistor
Author :
Najjar, F.E. ; Enquist, P.M. ; Slater, D.B. ; Chen, M.Y. ; Lind, K.J.
Author_Institution :
Research Triangle Inst., Research Triangle Park, NC, USA
Abstract :
The effect of the emitter Al mole fraction and emitter-base junction type on the performance of AlGaAs/GaAs pnp heterojunction transistors was investigated experimentally. A current gain as high as 1360 was obtained for a structure with an Al0.4Ga0.6As emitter and compositionally abrupt emitter-base junction; this was attributed to reduced surface recombination.
Keywords :
III-V semiconductors; aluminium compounds; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; Al 0.4Ga 0.6As emitter; AlGaAs-GaAs; HBT; III-V semiconductors; compositionally abrupt junction; current gain; emitter Al mole fraction; emitter-base junction type; heterojunction bipolar transistor; high gain type; p-n-p device; performance study; surface recombination-reduction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890699
