Title :
Polarisation-independent optical amplifier with buried facets
Author :
Olsson, N.A. ; Kazarinov, R.F. ; Nordland, W.A. ; Henry, C.H. ; Oberg, M.G. ; White, H.G. ; Garbinski, P.A. ; Savage, A.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
A polarisation-insensitive GaInAsP/InP laser amplifier with thick active layer and buried facets has been fabricated. The TE and TM gains are equal to within 1 dB at all drive currents and wavelengths.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; GaInAsP-InP; TM gains; buried facets; drive currents; laser amplifier; thick active layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890700
