The influence of device physical parameters of HEMT large-signal characteristics

Author

Weiss, Matthias ; Pavldis, D.

Author_Institution

Center for High Freq. Microelectron., Michigan Univ., Ann Arbor, MI, USA

Volume

36

Issue

2

fYear

1988

fDate

2/1/1988 12:00:00 AM

Firstpage

239

Lastpage

249

Abstract

The small- and large-signal high-frequency characteristics of submicrometer HEMTs (high-electron-mobility transistors) are analyzed by taking into account parasitic effects such as parallel conduction, fringing capacitances, and substrate leakage. The dependence of large-signal properties on device physical parameters is reported. This includes device gate length, donor layer thickness and doping, and spacer thickness. Satisfactory agreement is shown to exist between theoretically and experimentally obtained device characteristics

Keywords

high electron mobility transistors; solid-state microwave devices; HEMT; device physical parameters; donor layer thickness; doping; fringing capacitances; gate length; high-electron-mobility transistors; high-frequency characteristics; large-signal characteristics; parallel conduction; parasitic effects; smell signal HF characteristics; spacer thickness; submicron microwave devices; substrate leakage; Doping; Electron mobility; Erbium; Frequency; HEMTs; Ice thickness; MODFETs; Parasitic capacitance; Semiconductor process modeling; Transconductance; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3511

Filename

3511