• DocumentCode
    1231976
  • Title

    Development of key components for SIMOX intelligent power LSIs

  • Author

    Ohno, Tetsufumi ; Matsumoto, Shinichi ; Izumi, Kiyotaka

  • Author_Institution
    NTT LSI Labs., Kanagawa, Japan
  • Volume
    25
  • Issue
    16
  • fYear
    1989
  • Firstpage
    1071
  • Lastpage
    1072
  • Abstract
    High and low-voltage CMOS/SIMOX and power UMOS/bulk, which are key components for SIMOX intelligent power LSIs, have been developed. A new isolation structure which consists of double buried-oxide layers has been introduced to implement these components on one chip. The concept of the SIMOX power LSI as well as structures, fabrication, and characteristics of the devices are described.
  • Keywords
    MOS integrated circuits; large scale integration; power integrated circuits; SIMOX intelligent power LSIs; double buried-oxide layers; high-voltage CMOS/SIMOX; isolation structure; low-voltage CMOS/SIMOX; power UMOS/bulk;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890717
  • Filename
    35113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1231976