Title :
Reduced out-diffusion of Be implants in GaAs by coimplanting phosphorus
Author :
Sealy, B.J. ; Rezazaden, A.A.
Abstract :
Reports that by using rapid thermal annealing (RTA) and the coimplantation of phosphorus, the out-diffusion of beryllium atoms has been prevented. The authors have observed that the reverse annealing behaviour of the Be-implanted samples has been modified after the coimplantation of phosphorus.
Keywords :
III-V semiconductors; annealing; beryllium; gallium arsenide; ion implantation; phosphorus; Be outdiffusion; GaAs:Be; GaAs:Be, P; P coimplantation; RTA; electrical activation; rapid thermal annealing; reverse annealing; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890721
