Title :
Refractive index profile measurement of compound thin films by ellipsometry
Author :
Ho, J.H. ; Lee, C.L. ; Lei, T.F.
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
An ellipsometry technique to measure the arbitrary refractive index profile of compound thin films to within a resolution of 20 AA is reported. The technique utilises a phi 0-T1 plot and a successive sectioning and computation process to achieve high accuracy. Measurement results on O-N-O and oxynitride thin films are included.
Keywords :
dielectric thin films; ellipsometry; insulated gate field effect transistors; metal-insulator-semiconductor devices; refractive index measurement; semiconductor technology; silicon compounds; MOSFET gate dielectrics; ONO films; SiO 2-Si 3N 4-SiO 2 films; SiO xN y films; arbitrary refractive index profile; compound thin films; computation process; dielectric thin films; ellipsometry technique; high accuracy; multilayer thin films; oxynitride thin films; phi 0-T 1 plot; refractive index profile measurement; resolution; successive sectioning;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890726
