Title :
Electronic properties of thin SiO2 films deposited at low temperatures by new ECR microwave PECVD process
Author :
Chau, T.T. ; Kao, K.C.
Author_Institution :
Dept. of Electr. Eng., Manitoba Univ., Winnipeg, Man., Canada
Abstract :
Silicon dioxide films of 300-400 AA in thickness have been deposited at 270 degrees C by a new electron cyclotron resonant (ECR) microwave plasma enhanced chemical vapour deposition (PECVD) process. The electronic properties of the deposited films approach those of thermally grown silicon oxides with high stability.
Keywords :
dielectric thin films; plasma CVD coatings; plasma radiofrequency heating; semiconductor technology; silicon compounds; sputtered coatings; 270 C; 300 to 400 A; ECR microwave PECVD process; SiO 2 thin films; SiO 2-Si; electronic properties; high stability; plasma enhanced chemical vapour deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890728
