DocumentCode :
1232101
Title :
High-power individually addressable monolithic laser diode array
Author :
Tsunekane, Masaki ; Endo, Kazuhiro ; Nido, M. ; Komazaki, I. ; Katayama, R. ; Yoshihara, Kiyohito ; Yamanaka, Yuki ; Yuasa, Takeshi
Author_Institution :
Opto.-Electron. Res. Labs., NEC Corp., Kawasaki, Japan
Volume :
25
Issue :
16
fYear :
1989
Firstpage :
1091
Lastpage :
1092
Abstract :
A 0.78 mu m high-power AlGaAs laser diode array has been developed as a light source for a high data transfer rate optical disc memory system. The laser array consists of eight individually addressable channels with both 60 mW CW output power and little thermal crosstalk. 22 Mbit/s parallel read/write operation on a magneto-optical disc has also been demonstrated using the array.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; magneto-optical recording; optical disc storage; semiconductor junction lasers; 22 Mbit/s; 60 mW; 780 nm; 8 channel array; AlGaAs; CW; high data transfer rate; individually addressable channels; individually addressable monolithic laser diode array; light source; magneto-optical disc; optical disc memory system; output power; parallel read/write operation; simultaneous read write operations; thermal crosstalk;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890730
Filename :
35126
Link To Document :
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