DocumentCode :
1232104
Title :
Modeling Electrostatic and Quantum Detection of Molecules
Author :
Vasudevan, Smitha ; Walczak, Kamil ; Kapur, Neeti ; Neurock, Matt ; Ghosh, Avik W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Univ., Charlottesville, VA
Volume :
8
Issue :
6
fYear :
2008
fDate :
6/1/2008 12:00:00 AM
Firstpage :
857
Lastpage :
862
Abstract :
We describe two different modes for electronically detecting an adsorbed molecule using a nanoscale transistor. The attachment of an ionic molecular target shifts the threshold voltage through modulation of the depletion layer electrostatics. A stronger bonding between the molecule and the channel, involving actual overlap of their quantum mechanical wavefunctions, leads to scattering by the molecular traps that creates characteristic fingerprints when scanned with a backgate. We describe a theoretical approach to model these transport characteristics.
Keywords :
electrostatics; field effect transistors; gas sensors; molecular electronics; ChemFET; adsorbed molecule; depletion layer electrostatics; ionic molecular target shifts; molecules quantum detection; nanoscale transistor; quantum mechanical wavefunctions; threshold voltage; Bonding; Chemical sensors; Electron traps; Electrostatics; FETs; Particle scattering; Sensor phenomena and characterization; Silicon; Telegraphy; Threshold voltage; Coulomb scattering; field-effect transistor (FET); quantum interference; random telegraph signal (RTS); time-dependent NEGF;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2008.923264
Filename :
4529224
Link To Document :
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