Title :
Novel buried heterostructure laser triode for monolithic integration
Author :
Shimoyama, Koji ; Inoue, Yasuyuki ; Katoh, Masahiro ; Gotoh, H.
Author_Institution :
Thin-Films Lab., Mitsubishi Kasei Co., Ibaraki, Japan
Abstract :
A novel semiconductor laser, the ´T-squared injection buried heterostructure laser triode´ (TI-BHLT), has been successfully fabricated by MOVPE with in situ HCl vapour phase mesa-etching. The laser has been operated with a threshold current of 25 mA by independently injecting electrons into an active region from two n-type embedded regions.
Keywords :
semiconductor junction lasers; semiconductor technology; vapour phase epitaxial growth; HCl vapour phase mesa-etching; MOVPE; T-squared injection buried heterostructure laser triode; TI-BHLT; active region; buried heterostructure laser triode; independently injecting electrons; monolithic integration; n-type embedded regions; semiconductor laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890733
