Abstract :
A computer simulation of a GaAs Schottky barrier diode has been carried out, using a combination of a drift-diffusion equation solver and a Monte Carlo program. In contrast to previous similar reports, the authors found that a variable boundary condition is required, at least when the opposing barrier allows a Monte Carlo simulation to be accurately utilised.
Keywords :
III-V semiconductors; Schottky-barrier diodes; digital simulation; gallium arsenide; semiconductor device models; semiconductor-metal boundaries; GaAs; Monte Carlo program; Monte Carlo simulation; Schottky barrier diodes; computer simulation; drift-diffusion equation solver; semiconductors; variable boundary condition;
