Title :
Very low threshold current density SCH-MQW laser diodes emitting at 1.55 mu m
Author :
Glew, R.W. ; Garrett, B. ; Greene, P.D.
Author_Institution :
STC Technol. Ltd., Harlow, UK
Abstract :
GaInAs/AlGaInAs/InP separate-confinement heterostructure multiquantum well (SCH-MQW) laser diodes emitting at 1.55 mu m have been fabricated by atmospheric-pressure MOCVD. Room-temperature pulsed threshold current densities were 940 A cm-2 and 830 A cm-2 for 500 mu m and 800 mu m-long cavities, respectively. These are the lowest values reported to date for long wavelength MQW laser operation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.55 micron; 500 micron; 800 micron; CVD epitaxial growth; GaInAs-AlGaAs-InP; MOVPE; SCH-MQW laser diodes; atmospheric-pressure MOCVD; long wavelength MQW laser operation; low threshold current density; multiple quantum well; multiquantum well; room temperature operation; semiconductors; separate-confinement heterostructure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890738
