Design of a CMOS readout circuit for wide-temperature range capacitive MEMS sensors

Author

Yucai Wang ; Chodavarapu, Vamsy P.

Author_Institution

Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada

fYear

2014

fDate

3-5 March 2014

Firstpage

738

Lastpage

742

Abstract

We present a capacitance readout interface circuit in bulk CMOS process which is functional at wide temperature range between -55^oC to 175^oC. The proposed circuit uses a sigma-delta technique to convert capacitance ratio into a digital output and is suitable to provide a high-accuracy digitized output for capacitive MEMS sensors. The circuit is implemented using IBM 0.13μm CMOS technology. Simulation results show that the circuit has excellent stability over wide temperature range, as high as 0.1% accuracy between -55^oC to 175^oC.

Keywords

CMOS integrated circuits; capacitive sensors; integrated circuit design; microsensors; readout electronics; IBM technology; bulk CMOS process; capacitance ratio; capacitance readout interface circuit; high-accuracy digitized output; sigma-delta technique; size 0.13 mum; wide-temperature range capacitive MEMS sensors; CMOS integrated circuits; CMOS technology; Capacitance; Capacitive sensors; Temperature distribution; Temperature sensors; Bulk CMOS fabrication; Capacitance sensor; Wide-temperature operation;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality Electronic Design (ISQED), 2014 15th International Symposium on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4799-3945-9

Type

conf

DOI

10.1109/ISQED.2014.6783400

Filename

6783400