Title :
GaAs integrated Hall sensor with temperature-stabilised characteristics up to 300 degrees C
Author :
Itakura, K. ; Ueda, Daisuke ; Hagio, M. ; Kazumura, M.
Author_Institution :
Electrn. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
A GaAs integrated Hall sensor with temperature-stabilised characteristics ranging from -50 to 300 degrees C has been developed. The IC features a completely symmetric Schmitt trigger circuit that is essentially independent of the temperature drifts of circuit elements. An experimentally fabricated IC with the new circuit has achieved the highest temperature performance ever reported.
Keywords :
Hall effect transducers; III-V semiconductors; gallium arsenide; trigger circuits; -50 to 300 degC; GaAs; completely symmetric Schmitt trigger circuit; integrated Hall sensor; temperature drifts; temperature performance; temperature-stabilised characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891002
