Title :
AlInAs/GaInAs heterostructure bipolar transistors grown by metalorganic chemical vapour deposition
Author :
Jalali, Bahram ; Nottenburg, R.N. ; Hobson, W.S. ; Chen, Y.K. ; Fullowan, T. ; Pearton, S.J. ; Jordan, A.S.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Al0.48In0.52As/Ga0.47In0.53As heterostructure bipolar transistors are demonstrated using metalorganic chemical vapour deposition. The transistors have a cutoff frequency of 80 GHz and a common-emitter breakdown voltage of 5.5 V.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 5.5 V; 80 GHz; Al 0.48In 0.52As-Ga 0.47In 0.53As; EHF; HBT; MOCVD; SHF; common-emitter breakdown voltage; cutoff frequency; heterostructure bipolar transistors; metalorganic chemical vapour deposition; microwave devices; optoelectronic applications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891004
