Title :
Electrical properties of thin reoxidised nitrided interpolyoxides prepared by rapid thermal processing
Author :
Cheung, A.W. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
In the letter ultrathin (150 AA) interpoly oxynitride dielectrics have been fabricated using multiple in situ rapid thermal processing in reactive ambient (NH3 and O2). It is found that rapid thermal reoxidation greatly enhances the dielectric strength and charge-to-breakdown of the rapid thermal nitrided oxide samples with an increase in the final film thickness less than 10 AA. Breakdown fields in excess of 11 MV/cm have been obtained.
Keywords :
PROM; annealing; capacitors; dielectric thin films; electric strength; integrated circuit technology; integrated memory circuits; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; oxidation; semiconductor technology; silicon compounds; 10 A; 150 A; NH 3 reactive ambient; O 2 reactive ambient; ONO films; RTN; RTO; RTP; SiO 2-Si 3N 4; SiO xN y films; charge-to-breakdown; dielectric strength; film thickness; multiple in situ rapid thermal processing; nitridation; nonvolatile memory; oxidation; oxynitride dielectrics; rapid thermal nitrided oxide; rapid thermal processing; rapid thermal reoxidation; reactive ambient; ultrathin dielectrics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891024
