Title :
Submicron AlGaAs/GaAs heterostructure bipolar transistor with high gain
Author :
Anzlowar, M. ; Humphrey, D.A. ; Sivco, D. ; Cho, Andrew Y. ; Nottenburg, R.N. ; Levi, A.F.J.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Describes the realisation of self-aligned AlGaAs/GaAs heterostructure bipolar transistors with submicron emitter stripe width, current gain of 120 and a maximum operating current density greater than 105 A cm-2. The high current gain was achieved by passivating the extrinsic base region with thin AlGaAs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; passivation; semiconductor technology; AlGaAs-GaAs; HBT; current gain; extrinsic base region; heterostructure bipolar transistor; operating current density; passivation; scaling; self-aligned; semiconductors; submicron emitter stripe width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891028
