• DocumentCode
    1232725
  • Title

    GaInAs/InP pseudo-heterojunction bipolar transistors grown by MOVPE

  • Author

    Tokumitsu, E. ; Dentai, A.G. ; Joyner, Charles H.

  • Author_Institution
    AT&T Bell Labs., Crawford Hill Lab., Holmdel, NJ, USA
  • Volume
    25
  • Issue
    22
  • fYear
    1989
  • Firstpage
    1539
  • Lastpage
    1540
  • Abstract
    A GaInAs/InP pseudo-heterojunction bipolar transistors (PHBT) with a thin emitter barrier is demonstrated. A PHBT with a 5 nm-thick barrier showed a DC current gain of about 10, while the gain was as high as 220 for a device with a 20 nm-thick barrier. This value is close to that obtained in a conventional InP/GaInAs HBT with similar doping densities and fabrication process.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; vapour phase epitaxial growth; 20 nm; 5 nm; GaInAs-InP; MOVPE; current gain; semiconductors; thin emitter barrier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891035
  • Filename
    35187
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1232725