Title :
GaInAs/InP pseudo-heterojunction bipolar transistors grown by MOVPE
Author :
Tokumitsu, E. ; Dentai, A.G. ; Joyner, Charles H.
Author_Institution :
AT&T Bell Labs., Crawford Hill Lab., Holmdel, NJ, USA
Abstract :
A GaInAs/InP pseudo-heterojunction bipolar transistors (PHBT) with a thin emitter barrier is demonstrated. A PHBT with a 5 nm-thick barrier showed a DC current gain of about 10, while the gain was as high as 220 for a device with a 20 nm-thick barrier. This value is close to that obtained in a conventional InP/GaInAs HBT with similar doping densities and fabrication process.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; vapour phase epitaxial growth; 20 nm; 5 nm; GaInAs-InP; MOVPE; current gain; semiconductors; thin emitter barrier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891035
