The origin of extended dislocations induced by high-dose ion implantation

Author

Tsuchiya, Norihiko ; Fujii, Osamu ; Umezawa, Kaori ; Iwase, Masao ; Ushiku, Yukihiro

Author_Institution

Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan

Volume

18

Issue

1

fYear

2005

Firstpage

19

Lastpage

25

Abstract

The origin and the generation mechanism of ion implantation-induced dislocations is investigated with an Si₃N₄ band line/space pattern. The Si₃N₄ film-edge stress not only causes dislocation propagation but also causes the formation and deformation of extended dislocations at the initial stage of annealing. The behavior is clarified that the dislocation loops are deformed into pattern-edge dislocation half loops, which accumulate at the film edge and are punched out from the edge.

Keywords

annealing; arsenic; deformation; dislocation loops; edge dislocations; extended defects; ion implantation; silicon; silicon compounds; Si-SiO₂-Si₃N₄; Si-SiO₂:As; Si₃N₄ band line; Si₃N₄ film edge stress; Si₃N₄ space pattern; annealing; dislocation propagation; extended dislocations deformation; ion implantation induced dislocations; pattern edge dislocation half loops; Annealing; Conductive films; Dry etching; Ion implantation; Leakage current; Manufacturing processes; Semiconductor films; Silicon; Stress; Temperature;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2004.841817

Filename

1393040