DocumentCode :
1232895
Title :
Two-Dimensional Spatial Profile of Volume Fraction of Nanoparticles Incorporated Into a-Si:H Films Deposited by Plasma CVD
Author :
Nakamura, William Makoto ; Miyahara, Hiroomi ; Sato, Hiroshi ; Matsuzaki, Hidefumi ; Koga, Kazunori ; Shiratani, Masaharu
Author_Institution :
Dept. of Electron., Kyushu Univ., Fukuoka
Volume :
36
Issue :
4
fYear :
2008
Firstpage :
888
Lastpage :
889
Abstract :
Using an optical-scanning method, we obtained 2-D spatial profile of deposition rate of hydrogenated amorphous silicon (a-Si:H) films deposited by a multihollow discharge plasma CVD with a high spatial resolution. From the profile, we deduced 2-D spatial profile of the volume fraction of nanoparticles incorporated into films, since nanoparticles affect optical and electronic properties of a-Si:H films.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; nanoparticles; nanotechnology; plasma CVD; semiconductor growth; semiconductor thin films; silicon; 2D spatial profile; Si:H; a-Si:H film; electronic property; hydrogenated amorphous silicon film; multihollow discharge plasma CVD; nanoparticle volume fraction; optical property; optical-scanning method; silicon nanoparticles; Clusters; hydrogenated amorphous silicon (a-Si:H); multi-hollow plasma CVD; photovoltaic cell materials; thickness measurements;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2008.923830
Filename :
4530385
Link To Document :
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