Title :
Microchannel heat sinks for two-dimensional high-power-density diode laser arrays
Author :
Missaggia, L.J. ; Walpole, J.N. ; Liau, Z.L. ; Phillips, R.J.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
9/1/1989 12:00:00 AM
Abstract :
The operation of a two-dimensional GaInAsP/InP diode laser array with CW power dissipation up to 500 W/cm2 into a Si microchannel heat sink is discussed. The approximately 1×4-mm2 laser array was used to characterize the heat sink, and the value of 0.040°C cm2/W was obtained for the thermal resistance per unit area. The extrapolated value for a 1-cm2 heated area is 0.070°C cm2/W
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heat sinks; indium compounds; semiconductor junction lasers; silicon; thermal resistance; 1 mm; 4 mm; GaInAsP-InP laser; Si wafer; heated area; microchannel heat sink; power dissipation; thermal resistance per unit area; two-dimensional high-power-density diode laser arrays; Diode lasers; Heat sinks; Indium phosphide; Microchannel; Optical arrays; Power dissipation; Power generation; Resistance heating; Semiconductor laser arrays; Thermal resistance; Waste heat;
Journal_Title :
Quantum Electronics, IEEE Journal of
