Title :
Threshold current density of GaInAsP/InP quantum-box lasers
Author :
Miyamoto, Yasuyuki ; Miyake, Yasunari ; Asada, Masahiro ; Suematsu, Yasuharu
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
9/1/1989 12:00:00 AM
Abstract :
The laser threshold of three-dimensional GaInAsP/InP quantum-box lasers is analyzed. The optimized quantum-box array laser structure for the lowest threshold current density at room temperature is obtained theoretically, taking into account the effect of carrier leakage. The lowest threshold current densities are 14, 27, and 61 A/cm2 for 10, 20, and 40 cm-1 of cavity loss, respectively. The threshold current density is calculated, taking into account fluctuation in quantum-box size. The ideal structure of the quantum-box laser is discussed. It is pointed out that the modulation-doped structure looks promising for the suppression of carrier leakage
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; GaInAsP-InP lasers; GaInAsP/InP quantum-box lasers; carrier leakage; carrier leakage suppression; cavity loss; modulation-doped structure; quantum-box array laser structure; quantum-box size; room temperature; semiconductor heterostructure; three-dimensional; threshold current density; Carrier confinement; Epitaxial layers; Fluctuations; Indium phosphide; Laser theory; Mirrors; Optical arrays; Optical losses; Optical waveguides; Quantum mechanics; Stimulated emission; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
