Temperature dependence of optical gain, quantum efficiency, and threshold current in GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers

Author

Zhu, L.D. ; Zheng, B.Z. ; Feak, G.A.B.

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing, China

Volume

25

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

2007

Lastpage

2012

Abstract

The temperature dependence of the optical gain in graded-index separate-confinement heterostructure single-quantum-well lasers with different quantum-well widths were investigated. The observed dependence of the kink temperature on cavity loss and quantum-well width and the differential quantum efficiency minimum at the kink temperature were analyzed in terms of the temperature variation of the gain spectra and peak gain curves. Dependences of the characteristic temperature T ₀ on the quantum-well width, cavity loss, and temperature range are discussed in terms of the variation of the peak modal gain versus current relation with temperature and quantum-well width

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor junction lasers; semiconductor quantum wells; GaAs-GaAlAs; GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers; III-V semiconductor; cavity loss; current; differential quantum efficiency minimum; gain spectra; kink temperature; laser cavity resonators; optical gain temperature dependence; peak gain curves; peak modal gain; quantum efficiency; quantum-well widths; temperature range; threshold current; Gallium arsenide; Optical losses; Optical scattering; Optical sensors; Quantum well lasers; Quantum wells; Semiconductor lasers; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.35226

Filename

35226