Title :
Highly coherent long cavity GaAs/AlGaAs single quantum-well lasers
Author :
Larsson, Anders ; Andrekson, Peter A. ; Jonsson, Björn ; Lindström, C.
Author_Institution :
Dept. of Optoelectron. & Electr. Meas., Chalmers Univ. of Technol., Gothenburg, Sweden
fDate :
9/1/1989 12:00:00 AM
Abstract :
Measurements of the spectral properties of ridge waveguide graded index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs lasers are discussed. Long cavity lasers (800 μm) exhibit remarkably pure single-longitudinal mode spectra under continuous operation in spite of the short cavity mode spacing. At an output power of 5 mW, the sidemode suppression exceeds 24 dB and the linewidth is 1.5 MHz. The linewidth-power product is 6.4 MHz-mW. Measurements of the linewidth power product as a function of cavity length L gives an L-2 dependence in agreement with theory for lasers with small internal loss. The results are used to deduce the linewidth enhancement factor α at the gain peak wavelength ant its dependence on the excitation level. A decrease in α was observed for lasers operating at the second quantized state due to a recovery of the differential gain
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; light coherence; semiconductor junction lasers; spectral line breadth; 5 mW; 800 micron; CW lasers; GaAs-AlGaAs; GaAs/AlGaAs single quantum-well lasers; III-V semiconductor; L-2 dependence; cavity length; differential gain; gain peak wavelength; high coherence; linewidth; linewidth enhancement factor; linewidth-power product; long cavity; output power; pure single-longitudinal mode spectra; ridge waveguide graded index separate-confinement heterostructure; second quantized state; short cavity mode spacing; sidemode suppression; small internal loss laser theory; Gallium arsenide; Laser modes; Laser theory; Length measurement; Loss measurement; Power generation; Power lasers; Power measurement; Quantum well lasers; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of