Title :
FET technology for low-noise front ends
Author :
Arnold, Jonathan
Author_Institution :
SRI Int., Menlo Park, CA, USA
fDate :
9/1/1983 12:00:00 AM
Keywords :
Gallium materials/devices; Microwave FETs; Millimeter-wave FETs; Satellite communication, onboard systems; Conductivity; Electron mobility; FETs; MESFETs; Noise figure; Substrates;
Journal_Title :
Communications Magazine, IEEE
DOI :
10.1109/MCOM.1983.1091435