• DocumentCode
    1233481
  • Title

    AIN/GaN insulated gate HEMTs with HfO2 gate dielectric

  • Author

    Deen, D.A. ; Binari, S.C. ; Storm, D.F. ; Katzer, D.S. ; Roussos, J.A. ; Hackley, J.C. ; Gougousi, T.

  • Author_Institution
    Microelectron. Div., Naval Res. Lab., Washington, DC
  • Volume
    45
  • Issue
    8
  • fYear
    2009
  • Firstpage
    423
  • Lastpage
    424
  • Abstract
    AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 m gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 A/mm in pinch-off. Unity gain cutoff frequencies, ft and f max, were measured to be 9 and 32 GHz, respectively.
  • Keywords
    MOS integrated circuits; aluminium compounds; atomic layer deposition; gallium compounds; hafnium compounds; high electron mobility transistors; AlN-GaN; HfO2; atomic layer deposition; frequency 32 GHz; frequency 9 GHz; gate dielectric; high-K dielectrics; insulated gate HEMT; single heterojunction MOS-HEMT; size 1.3 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.3688
  • Filename
    4813172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1233481