Title :
Application of Dual-Gate Mos Field-Effect Transistors in Practical Radio Receivers
Author_Institution :
Radio Corporation of America Electronic Components and Devices Somerville, N.J.
fDate :
7/1/1967 12:00:00 AM
Keywords :
Capacitance; Dynamic range; FETs; Feedback; Impedance; Insulation; MOSFETs; Receivers; Resistors; Voltage;
Journal_Title :
Broadcast and Television Receivers, IEEE Transactions on
DOI :
10.1109/TBTR1.1967.4320073
