Title :
1200-V Low-Loss IGBT Module With Low Noise Characteristics and High dIC/dt Controllability
Author :
Onozawa, Yuichi ; Otsuki, Masahito ; Iwamuro, Noriyuki ; Miyashita, Syuji ; Miyasaka, Tadashi ; Seki, Yasukazu ; Matsumoto, Takashi
Author_Institution :
Fuji Electr. Device Technol. Co., Ltd, Matsumoto
Abstract :
This paper presents the enhanced characteristics of a newly developed low-loss and low-noise 1200-V insulated gate bipolar transistor (IGBT) module. In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but also to reduce the low-current turn-on dIC/dt of the IGBT. The new IGBTs with high turn-on dIC /dt controllability and low turn-on power dissipation have been successfully developed by the reduction of Miller capacitance resulting from an optimization of the surface. The 1200-V 450-A IGBT module utilizing the new IGBT and optimized FWD chips has been able to realize 30% reduction of the switching power dissipation when compared to the conventional IGBT module under the operating condition to set the same noise emission level
Keywords :
bipolar integrated circuits; circuit noise; field effect transistor circuits; insulated gate bipolar transistors; switching circuits; 1200 V; 450 A; Miller capacitance reduction; free wheeling diodes; insulated gate bipolar transistors; low-loss IGBT module; low-noise emission; noise emission level; reverse recovery characteristics; surface optimization; switching power dissipation; turn-on power dissipation; Capacitance; Controllability; Diodes; Electric variables; Electromagnetic interference; Industry Applications Society; Insulated gate bipolar transistors; Noise level; Noise reduction; Power dissipation; Electromagnetic interference (EMI) noise; Miller capacitance; reverse-recovery ${d}V/{d}t$; turn-on ${d}i/{d}t$ controllability;
Journal_Title :
Industry Applications, IEEE Transactions on
DOI :
10.1109/TIA.2006.890024
