Title :
Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology
Author :
El Moukhtari, I. ; Pouget, V. ; Darracq, F. ; Larue, C. ; Perdu, P. ; Lewis, David
Author_Institution :
IMS Lab., Univ. Bordeaux 1, Talence, France
Abstract :
Impact of NBTI degradation on the SET sensitivity of 65 nm CMOS test structures is investigated. Pre- and post-aging SET laser thresholds measurements on chains of gates indicate a decrease of SET sensitivity due to NBTI.
Keywords :
CMOS integrated circuits; sensitivity; stability; CMOS technology; CMOS test structures; NBTI degradation; SET sensitivity; negative bias temperature instability effect; post-aging SET laser threshold measurements; single event transient sensitivity; size 65 nm; Aging; Inverters; Lasers; Logic gates; MOSFETs; Sensitivity; Threshold voltage; Negative bias temperature instability (NBTI); pulsed laser testing; single event transient (SET);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2231437
