Short-channel single-gate SOI MOSFET model

Author

Suzuki, Kunihiro ; Pidin, Sergey

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

50

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

1297

Lastpage

1305

Abstract

The authors derive an analytical model for threshold voltage for fully depleted single-gate silicon-on-insulator (SOI) MOSFETs taking into consideration the two-dimensional effects in both SOI and buried-oxide layers. Their model is valid for both long- and short-channel SOI MOSFETs and demonstrates the dependence of short-channel effects on the device parameters of channel-doping concentration, gate oxide, SOI, and buried-oxide thickness. It reproduces the numerical data for sub-0.1-μm gate-length devices better than previous models.

Keywords

MOSFET; doping profiles; semiconductor device models; silicon-on-insulator; 0.1 micron; Si; analytical model; buried-oxide layers; buried-oxide thickness; channel-doping concentration; device parameters; short-channel SOI MOSFETs; single-gate SOI MOSFET model; sub-micron gate-length devices; threshold voltage; two-dimensional effects; Analytical models; Boundary conditions; Distribution functions; MOSFET circuits; Medical simulation; Polynomials; Predictive models; Silicon on insulator technology; Threshold voltage; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.813450

Filename

1210780