A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

Author

Pelk, Marco J. ; Neo, W. C Edmund ; Gajadharsing, John R. ; Pengelly, Raymond S. ; De Vreede, Leo C N

Author_Institution

Lab. of High-Freq. Technol. & Components, Delft Inst. of Microsyst., Delft

Volume

56

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

1582

Lastpage

1591

Abstract

A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented. Simple, but accurate design equations for the output power combiner of the amplifier are introduced. Mixed-signal techniques are utilized for uncompromised control of the amplifier stages to optimize efficiency, as well as linearity. The combination of the above techniques resulted in an unprecedented high efficiency over a 12-dB power backoff range, facilitating a record high power-added efficiency for a wideband code division multiple access test signal with high crest factor, while meeting all the spectral requirements for Universal Mobile Telecommunications System base stations.

Keywords

3G mobile communication; III-V semiconductors; code division multiple access; gallium compounds; power amplifiers; wide band gap semiconductors; GaN; Universal Mobile Telecommunications System basestation; basestation application; basestation power amplifier; design equations; high crest factor; high-efficiency 100-W GaN three-way Doherty amplifier; mixed-signal techniques; output power combiner; power 100 W; wideband code division multiple access test signal; Base station; Doherty; Universal Mobile Telecommunications System (UMTS); high efficiency; mixed signal; power amplifier; predistortion; wideband code division multiple access (W-CDMA);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2008.924364

Filename

4530762