Title :
A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
Author :
Pelk, Marco J. ; Neo, W. C Edmund ; Gajadharsing, John R. ; Pengelly, Raymond S. ; De Vreede, Leo C N
Author_Institution :
Lab. of High-Freq. Technol. & Components, Delft Inst. of Microsyst., Delft
fDate :
7/1/2008 12:00:00 AM
Abstract :
A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented. Simple, but accurate design equations for the output power combiner of the amplifier are introduced. Mixed-signal techniques are utilized for uncompromised control of the amplifier stages to optimize efficiency, as well as linearity. The combination of the above techniques resulted in an unprecedented high efficiency over a 12-dB power backoff range, facilitating a record high power-added efficiency for a wideband code division multiple access test signal with high crest factor, while meeting all the spectral requirements for Universal Mobile Telecommunications System base stations.
Keywords :
3G mobile communication; III-V semiconductors; code division multiple access; gallium compounds; power amplifiers; wide band gap semiconductors; GaN; Universal Mobile Telecommunications System basestation; basestation application; basestation power amplifier; design equations; high crest factor; high-efficiency 100-W GaN three-way Doherty amplifier; mixed-signal techniques; output power combiner; power 100 W; wideband code division multiple access test signal; Base station; Doherty; Universal Mobile Telecommunications System (UMTS); high efficiency; mixed signal; power amplifier; predistortion; wideband code division multiple access (W-CDMA);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2008.924364
