• DocumentCode
    1234002
  • Title

    Strained-Si on Si1-xGex MOSFET mobility model

  • Author

    Roldán, J.B. ; Gámiz, F. ; Cartujo-Cassinello, P. ; Cartujo, P. ; Carceller, J.E. ; Roldan, A.

  • Author_Institution
    Dept. de Electron. y Tecnologia de Computadores, Univ. de Granada, Spain
  • Volume
    50
  • Issue
    5
  • fYear
    2003
  • fDate
    5/1/2003 12:00:00 AM
  • Firstpage
    1408
  • Lastpage
    1411
  • Abstract
    A new electron mobility model for strained-Si MOSFETs has been developed. The mobility increase produced by the strain in the silicon layer is accurately studied and described by means of simple analytical expressions. This model can be easily included in conventional device and circuit simulators. The need of a surface-roughness model dependent on the germanium mole fraction is highlighted. The model fits well experimental measurements.
  • Keywords
    Ge-Si alloys; MOSFET; electron mobility; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; Ge mole fraction; Si-Si1-xGex; analytical low-field mobility model; doping concentration; electron mobility model; mobility enhancement; oxide thickness; strained-Si MOSFETs; strained-Si on Si1-xGex; surface roughness; Conductivity; Doping; Effective mass; Electron mobility; Germanium; MOSFET circuits; Phonons; Scattering; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.813471
  • Filename
    1210810
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1234002