Title :
Strained-Si on Si1-xGex MOSFET mobility model
Author :
Roldán, J.B. ; Gámiz, F. ; Cartujo-Cassinello, P. ; Cartujo, P. ; Carceller, J.E. ; Roldan, A.
Author_Institution :
Dept. de Electron. y Tecnologia de Computadores, Univ. de Granada, Spain
fDate :
5/1/2003 12:00:00 AM
Abstract :
A new electron mobility model for strained-Si MOSFETs has been developed. The mobility increase produced by the strain in the silicon layer is accurately studied and described by means of simple analytical expressions. This model can be easily included in conventional device and circuit simulators. The need of a surface-roughness model dependent on the germanium mole fraction is highlighted. The model fits well experimental measurements.
Keywords :
Ge-Si alloys; MOSFET; electron mobility; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; Ge mole fraction; Si-Si1-xGex; analytical low-field mobility model; doping concentration; electron mobility model; mobility enhancement; oxide thickness; strained-Si MOSFETs; strained-Si on Si1-xGex; surface roughness; Conductivity; Doping; Effective mass; Electron mobility; Germanium; MOSFET circuits; Phonons; Scattering; Silicon; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.813471
