Title :
A Monolithic Mos-Bipolar Audio Amplifier
Author :
Lin, H.C. ; Iyer, Ramachandra
Author_Institution :
Westinghouse Electric Corporation Molecular Electronics Division Elkridge, Maryland 21227
fDate :
7/1/1968 12:00:00 AM
Abstract :
A one watt AC MOS-Bipolar Audio Amplifier having a voltage gain exceeding 20 db and the pass-band extending to sub-audio frequencies (-3db point of 0.1 Hz) has been designed and integrated. A unique pre-amp employing MOS transistors and a unity gain n-p-n transistor overcomes the disadvantages of the "Unibi" amplifier. Performance characteristics of the breadboard and the integrated amplifier are presented.
Keywords :
Bipolar transistors; Capacitors; Diodes; FETs; Gain; Impedance; Integrated circuit technology; MOSFETs; Molecular electronics; Voltage;
Journal_Title :
Broadcast and Television Receivers, IEEE Transactions on
DOI :
10.1109/TBTR1.1968.4320132
