Title :
Fast reverse recovery body diode in high-voltage VDMOSFET using cell-distributed Schottky contacts
Author :
Cheng, Xu ; Sin, Johnny K O ; Kang, Baowei ; Feng, Chuguang ; Wu, Yu ; Liu, Xingming
Author_Institution :
Dept. of Electron. Eng., Beijing Polytech. Univ., China
fDate :
5/1/2003 12:00:00 AM
Abstract :
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed. In this approach, a Schottky contact is integrated into every cell of the VDMOSFET. Experimental results from the fabricated samples show a 50% decrease in the reverse recovery charge and a 60% increase in the softness factor of the body diode in 500 V/2 A VDMOSFETs.
Keywords :
Schottky barriers; power MOSFET; semiconductor device breakdown; 2 A; 500 V; body diode softness factor; breakdown voltage; cell-distributed Schottky contacts; current handling capability; fast reverse recovery body diode; high-voltage VDMOSFET; high-voltage vertical double-diffused MOSFET; Bridge circuits; Fabrication; MOSFET circuits; Power MOSFET; Power engineering and energy; Schottky barriers; Schottky diodes; Silicon compounds; Threshold voltage; Topology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.813226
