Title :
10-W/mm AlGaN-GaN HFET with a field modulating plate
Author :
Ando, Y. ; Okamoto, Y. ; Miyamoto, H. ; Nakayama, T. ; Inoue, T. ; Kuzuhara, M.
Author_Institution :
Photonic & Wireless Devices Res. Labs., NEC Corp., Otsu, Japan
fDate :
5/1/2003 12:00:00 AM
Abstract :
AlGaN-GaN heterojunction field-effect transistors (HFETs) with a field modulating plate (FP) were fabricated on an SiC substrate. The gate-drain breakdown voltage (BV/sub gd/) was significantly improved by employing an FP electrode, and the highest BV/sub gd/ of 160 V was obtained with an FP length (L/sub FP/) of 1 μm. The maximum drain current achieved was 750 mA/mm, together with negligibly small current collapse. A 1-mm-wide FP-FET (L/sub FP/=1 μm) biased at a drain voltage of 65 V demonstrated a continuous wave saturated output power of 10.3 W with a linear gain of 18.0 dB and a power-added efficiency of 47.3% at 2 GHz. To our knowledge, the power density of 10.3 W/mm is the highest ever achieved for any FET of the same gate size.
Keywords :
III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; wide band gap semiconductors; 1 micron; 1 mm; 10.3 W; 160 V; 18 dB; 2 GHz; 47.3 percent; 65 V; AlGaN-GaN; AlGaN-GaN HFET; SiC; SiC substrate; field modulating plate; gate-drain breakdown voltage; heterojunction FET; heterojunction field-effect transistors; linear gain; maximum drain current; power density; power-added efficiency; Aluminum gallium nitride; Electrodes; FETs; Gain; HEMTs; Heterojunctions; MODFETs; Power generation; Silicon carbide; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.812532
