Title :
Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode
Author :
Pan, James ; Woo, Christy ; Yang, Chih-Yuh ; Bhandary, Umesh ; Guggilla, Srinivas ; Krishna, Nety ; Chung, Hua ; Hui, Angela ; Yu, Bin ; Xiang, Qi ; Lin, Ming-Ren
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
fDate :
5/1/2003 12:00:00 AM
Abstract :
This work reports the first replacement (damascene) metal gate NMOSFETs with atomic layer deposition (ALD) TaN/PVD and electroplated Cu as the stacked gate electrode. Transistors with PVD TaN and PVD Ta electrode are also fabricated. Our data show that ALD TaN has the right work function for the N-MOSFETs. The Cu damascene process can reduce the gate resistivity. The ALD process has the advantage of reducing the stress and radiation damage to the gate oxide. The damascene process flow bypasses high temperature steps (>600/spl deg/C)-critical for metal gate and high-k materials.
Keywords :
CMOS integrated circuits; MOSFET; annealing; copper; electroplated coatings; integrated circuit metallisation; leakage currents; tantalum; tantalum compounds; 600 C; ALD TaN/electroplated-Cu; ALD process; Cu damascene process; PVD Ta; PVD TaN; Ta; TaN-Cu; atomic layer deposition; damascene metal gate CMOS technology; gate resistivity reduction; radiation damage reduction; replacement metal-gate NMOSFETs; stacked gate electrode; stress reduction; work function; Atherosclerosis; Atomic layer deposition; Conductivity; Electrodes; High K dielectric materials; High-K gate dielectrics; Inorganic materials; MOSFET circuits; Stress; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.812574
