DC sputtered indium-tin oxide transparent cathode for organic light-emitting diode

Author

Chen, Haiying ; Qiu, Chengfeng ; Wong, Man ; Kwok, Hoi Sing

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

24

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

315

Lastpage

317

Abstract

The performance of top-emitting organic light-emitting diodes depends not just on the choice of the transparent cathodes but also on their techniques of formation. Compared to the damage induced by radio frequency sputtering of indium-tin oxide cathode, that induced by DC sputtering was verified to be less severe and relatively independent of the sputtering power. Consequently, a high DC sputtering power of 120 W could be employed to achieve a high deposition rate of 0.1 nm/s. Adequate emission efficiency was maintained, even with a relatively thin 7-nm copper (II) phthalocyanine buffer layer.

Keywords

LED displays; cathodes; indium compounds; organic light emitting diodes; sputter deposition; sputtered coatings; 120 W; 7 nm; Cu phthalocyanine buffer layer; DC sputtering; ITO; ITO transparent cathodes; InSnO; organic LEDs; organic light-emitting diodes; top-emitting OLEDs; transparent cathode formation techniques; Buffer layers; Cathodes; Copper; Electrodes; Flat panel displays; Glass; Indium tin oxide; Organic light emitting diodes; Radio frequency; Sputtering;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.812550

Filename

1210838