Title :
Tests With Soft X-rays of an Improved Monolithic SOI Active Pixel Sensor
Author :
Ryu, S.G. ; Tsuru, Takeshi Go ; Prigozhin, G. ; Kissel, S. ; Bautz, M. ; LaMarr, B. ; Nakashima, S. ; Foster, R.F. ; Takeda, Akiko ; Arai, Yutaro ; Imamura, Takashi ; Ohmoto, T. ; Iwata, A.
Author_Institution :
Dept. of Phys., Kyoto Univ., Kyoto, Japan
Abstract :
We have been developing monolithic active pixel sensors with 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, called SOIPIX, for high-speed wide-band X-ray imaging spectroscopy on future astronomical satellites. In this work, we investigate a revised chip (XRPIX1b) for soft X-rays used in frontside illumination. The Al Kα line at 1.5 keV is successfully detected and energy resolution of 188 eV (FWHM) is achieved from a single pixel at this energy. The responsivity is improved to 6 μV/electron and the readout noise is 18 electrons rms. Data from 3 ×3 pixels irradiated with 6.4 keV (Fe Kα) X-rays demonstrates that the circuitry crosstalk between adjacent pixels is less than 0.5%.
Keywords :
CMOS integrated circuits; X-ray apparatus; astronomical telescopes; semiconductor counters; silicon-on-insulator; Al K-alpha line; SOI CMOS technology; SOIPIX; XRPIX1b revised chip; astronomical satellites; circuitry crosstalk; electron volt energy 1.5 keV; front side illumination; high speed wideband X-ray imaging spectroscopy; improved monolithic SOI active pixel sensor; pixel sensor responsivity; readout noise; silicon on insulator CMOS technology; soft X-rays; Crosstalk; Energy resolution; Iron; Lighting; Noise; Photonics; X-rays; Active pixel sensor (APS); CMOS; charge splitting; crosstalk; frontside illumination; multi-point correlated sampling; silicon-on-insulator (SOI); soft x-ray;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2231880
