A high efficient 820 nm MOS Ge quantum dot photodetector

Author

Hsu, B.-C. ; Chang, S.T. ; Chen, T.C. ; Kuo, P.-S. ; Chen, P.S. ; Pei, Z. ; Liu, C.W.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

24

Issue

5

fYear

2003

fDate

5/1/2003 12:00:00 AM

Firstpage

318

Lastpage

320

Abstract

A Ge quantum dot photodetector has been demonstrated using a metal-oxide-semiconductor (MOS) tunneling structure. The oxide film was grown by liquid phase deposition (LPD) at 50/spl deg/C. The photodetector with five-period Ge quantum dot has responsivity of 130, 0.16, and 0.08 mA/W at wavelengths of 820 nm, 1300 nm, and 1550 nm, respectively. The device with 20-period Ge quantum dot shows responsivity of 600 mA/W at the wavelength of 850 nm. The room temperature dark current density is as low as 0.06 mA/cm/sup 2/. The high performance of the photodetectors at 820 nm makes it feasible to integrate electrooptical devices into Si chips for short-range optical communication.

Keywords

MIS devices; dark conductivity; germanium; integrated optoelectronics; liquid phase deposition; optical communication equipment; photodetectors; semiconductor quantum dots; tunnelling; 20-period quantum dot; 820 to 1550 nm; Ge; Ge quantum dot photodetector; MOS photodetector; MOS tunneling structure; Si; Si chips; five-period quantum dot; liquid phase deposition; oxide film; short-range optical communication; Absorption; Dark current; Diodes; Electrodes; Oxidation; Photodetectors; Quantum dots; Temperature; Tunneling; US Department of Transportation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.812558

Filename

1210839