Title :
Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers
Author :
Miura, Mineo ; Nakamura, Shun-ichi ; Suda, Jun ; Kimoto, Tsunenobu ; Matsunami, Hiroyuki
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
fDate :
5/1/2003 12:00:00 AM
Abstract :
Using epitaxial multiple p-n junction structures of 4H-SiC, lateral super junction diodes were fabricated for the first time. The breakdown voltage of the device was 400 V, which is more than 3/spl times/ higher than the theoretical value calculated for a device with uniformly-doped drift layer (130 V), indicating the effective operation of the super junction structure.
Keywords :
p-n junctions; power semiconductor diodes; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 400 V; 4H-SIC; SiC; SiC lateral super junction diodes; breakdown voltage; epitaxial multiple p-n junction structures; multiple stacking p-/n-layers; uniformly-doped drift layer; Epitaxial growth; Fabrication; P-n junctions; Photonic band gap; Schottky diodes; Semiconductor diodes; Semiconductor materials; Silicon carbide; Stacking; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.812561
