Title :
Modified derivative superposition method for linearizing FET low-noise amplifiers
Author :
Aparin, Vladimir ; Larson, Lawrence E.
Author_Institution :
Qualcomm Inc., San Diego, CA
Abstract :
Intermodulation distortion in field-effect transistors (FETs) at RF frequencies is analyzed using the Volterra-series analysis. The degrading effect of the circuit reactances on the maximum IIP3 in the conventional derivative-superposition (DS) method is explained. The noise performance of this method is also analyzed and the effect of the subthreshold biasing of one of the FETs on the noise figure (NF) is shown. A modified DS method is proposed to increase the maximum IIP3 at RF. It was used in a 0.25-mum Si CMOS low-noise amplifier (LNA) designed for cellular code-division multiple-access receivers. The LNA achieved +22-dBm IIP3 with 15.5-dB gain, 1.65-dB NF, and 9.3 mA@2.6-V power consumption
Keywords :
CMOS analogue integrated circuits; Volterra series; cellular radio; code division multiple access; electric reactance; field effect transistor circuits; integrated circuit design; integrated circuit noise; intermodulation distortion; network analysis; nonlinear network analysis; power consumption; radiofrequency amplifiers; 1.65 dB; 15.5 dB; 2.6 V; 9.3 mA; FET; Si; Si CMOS low-noise amplifier; Volterra-series analysis; cellular code-division multiple-access receivers; circuit reactances degrading effect; field-effect transistor; intermodulation distortion; linearizing FET low-noise amplifiers; modified derivative superposition method; noise performance; power consumption; Circuit noise; Degradation; FETs; Intermodulation distortion; Low-noise amplifiers; Multiaccess communication; Noise figure; Noise measurement; Performance analysis; Radio frequency; Amplifier noise; MOSFET amplifiers; Volterra series; intermodulation distortion; nonlinearities;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2004.840635
